Scattering Parameter Method of Determining Base Transit Time for Bipolar Transistors.
ARMY MISSILE RESEARCH DEVELOPMENT AND ENGINEERING LAB REDSTONE ARSENAL AL GRO UND EQUIPMENT/MATERIALS DIRECTORATE
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The report presents an analytical and practical approach for the determination of base transit time of bipolar transistors using scattering parameters. Also presented are the governing relations and computer equations which facilitate data reduction on a digital computer. There are several versions of the computer codes written in FORTRAN IV and machine code for desk top type computers. These programs are available upon request. Author
- Electrical and Electronic Equipment