100-Watt PEP Insulated-Gate Field-Effect Transistor for Operation from a 28-Volt Supply.
Interim engineering rept. no. 4, 21 Dec 69-21 Mar 70,
RCA ELECTRONIC COMPONENTS SOMERVILLE NJ ADVANCED TECHNOLOGY LAB
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Further evaluation of fabricated transistors was performed. Investigations of catastrophic breakdown and RF behavior were carried out. Experiments have shown that the catastrophic breakdown can be reduced or eliminated by heavily doping the channel region p-type. However, this drastically reduces transconductance. RF measurements indicated power gain in the range from 12 to 18 dB, and a power output between 3 and 10 watts with 50-percent efficiency at 32 megahertz. While the power gain is reasonable, the power output obtained is below predicted capabilities. Diffused channel devices, which do not exhibit the catastrophic breakdown problem, were also fabricated. These devices showed very low transconductance. Device packaging techniques are also described and evaluated. Author
- Electrical and Electronic Equipment