Tunneling Spectroscopy Study of GaAs, CdS and ZnO Schottky Barrier Junctions.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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An experimental study was made of phonon spectra in GaAs, CdS, and ZnO by tunneling spectroscopy. Results on GaAs showed structure in the dVdI and the second differential of V with respect to I curves at the TA, 2TA, LO phonon energies. The TA, LA, TO, and three branches of the TO phonon were identified in CdS, as well as several multi-phonon peaks and a zero-bias conductance maximum attributable to magnetic moments localized in the barrier region. The same zero-bias anomaly, and structure at the LO phonon energy were observed in ZnO. Author
- Solid State Physics