Manufacturing Techniques for Controlled Deposition and Application of Doped Oxides.
Final technical rept. 1 Mar 68-30 Dec 69,
RCA ELECTRONIC COMPONENTS SOMERVILLE NJ ADVANCED TECHNOLOGY LAB
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Considerable progress was made toward the establishment of the manufacturing processes for a fully controlled doped-oxide diffusion system. The basis for this development was the study of the chemistry and kinetics of the oxidation of silane, phosphine, and diborane. A greatly improved gas handling and dilution system was designed and introduced into the manufacturing area. A close-spaced horizontal deposition reactor was developed. This is a cold-wall all-metal system with no moving parts, in which SiO2 layers can be deposited on 28 2-inch-diameter wafers at a rate of 400 A to 800 A per minute at 280C to 350C. The relationship between gas and deposit composition was analyzed by infrared, chemical mass spectrographic, and X-ray fluorescence methods, and a roughly 11 correlation was found in the phosphorus-to-silane transfer ratio. Next, the transfer of phosphorus to the silicon surface was examined analytically. Computer programs were used to predict the effect of time, temperature, oxidizing condition, phase relations, and solubilities in oxide and bulk silicon. This technique for the precise control of oxide composition and, hence, of surface concentration and junction depth was applied to MOS transfer fabrication, which confirms the utility of the method of phosphorus diffusion under production conditions. The less than satisfactory behavior of dilute diborane mixtures was attributed to the extreme sensitivity of diborane to moisture. Author
- Manufacturing and Industrial Engineering and Control of Production Systems
- Atomic and Molecular Physics and Spectroscopy