Nonlinear Study of Semiconductor Avalanches.
Interim technical rept.,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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A time-dependent differential equation for the generated conduction current density in a semiconductor avalanche has been derived in the quasistatic approximation. The modification of the intrinsic response time is shown to be of special importance in the design of avalanche photodiodes. Analytical design criteria for such diodes are given. A simplified analytical model is given for high current density operation. Optimization of the generated RF power is discussed in considering the thermal limitations. A simple stability criterion is given. Gain saturation characteristics have been calculated for negative-resistance amplification in the transit time mode as well as for self-pumped degenerate operation. Frequency conversion characteristics of avalanche diodes have been investigated. The best prospects for frequency conversion with gain are offered by negative-resistance amplification, i.e., by operation in potentially unstable regions. Distributed avalanche effects have been considered. The impact of negative space-charge resistance and non-saturated velocities on high current density operation is discussed. The design of a microstrip circuit for an avalanche diode oscillator is described. Author
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