High Capacitance Thin Film Structures.
Quarterly progress rept. no. 1, 16 Mar-15 Jun 70,
GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE RESEARCH CENTE R
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The useful operating temperature range of the thin-film A1-NiO-Au capacitors was extended by reducing the NiO film thickness, in accordance with predictions of the physical model. The capacitors perform satisfactorily in an integrable breadboard oscillator circuit. The fabrication procedure established for use with quartz substrates also yields films on oxidized silicon substrates with a specific capacitance greater than micro Fsq in. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy