Research and Development of an Electron Beam Semiconductor Amplifier.
Final rept. 1 Apr 69-31 Mar 70,
MACHLETT LABS INC STAMFORD CT
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Electron Beam Semiconductor Amplifier tubes designated as EE-124, were developed, tested and delivered. Techniques were developed which made it possible to combine, in one vacuum envelope, a grid controlled electron tube type structure, which was used as the input end of the EE-124, and an ion implanted silicon diode which when bombarded by the electron stream from the input structure, produced current gains of over 1000. Author
- Electrical and Electronic Equipment