S-Band Solid State Amplifier Miniaturization.
Final technical rept. Aug 68-Mar 70,
TRW SEMICONDUCTORS LAWNDALE CA
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The report describes the development of an all-solid-state integrated amplifier module having a CW output of 10 watts, 30 db gain and a 3 db bandwidth of 100 MHz centered at 2.25 GHz. The approach taken for fabricating the amplifier utilizes eight interdigitated and overlay transistor chips. The preamplifier chain used PT6669, PT6618 and 2N5768 in both series and parallel amplifier configurations. The power amplifier was comprised of 2N5768 interdigitated transistors in parallel, with the power combined by means of microstripline, hybrid power splitting-combining techniques. The experimental model delivered a maximum of 12.5 watts at 2.25 GHz and had an output power variation less than 1 db across the 2.2 to 2.3 GHz frequency band. A significant advantage of this solid state module was that the power was amplified directly at S band and did not require multiplier chains. The amplifier occupied a volume less than 6 cubic inches and could have been reduced further by placing the integrated circuits in closer proximity. State-of-the-art integrated circuit techniques were used extensively through this development effort. Author
- Electrical and Electronic Equipment