Accession Number:

AD0871603

Title:

Thermal Shock Fracture of Single Crystal Silicon

Descriptive Note:

Technical rept. Jan 68-Dec 69,

Corporate Author:

AIR FORCE WEAPONS LAB KIRTLAND AFB NM

Report Date:

1970-06-01

Pagination or Media Count:

35.0

Abstract:

The usual approach to thermal shock fracture of crystalline material is the classic quenching of an initially hot crystal by subjecting it to a rapid cooling of its surroundings. A new approach can be obtained by the deposition of internal energy directly into the crystal by electron bombardment in an intense pulsed beam. If the sample thickness is chosen properly with respect to the range of the incident electrons in the material, a quite uniform deposition takes place, minimizing the formation of shock waves. If the amount of energy deposited is sufficient, thermal shock fracture of the crystal occurs. A series of experimental investigations has been made by using high-speed photographic techniques. The results show values for crack initiation time and for crack tip propagation velocities consistent with thermal shock fracture.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE