High Capacitance Thin Film Structures.
Final rept. 5 Mar 69-4 Mar 70,
GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE RESEARCH CENTE R
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A fabrication method was developed for thin-film metal-nickel oxide-metal capacitors with a specific capacitance of 10 microfaradssq in 1.55 microfaradssq cum. The structures have a voltage-independent capacitance in the range of 5 to -5 volts, a dissipation factor of 0.02 to 0.04 at 1 kHz, and the capability of operation at 5 volts dc. They require no forming or aging, and exhibit little change in properties after 1800 hours of life testing under bias. A semiquantitative physical model was developed to account for most of the observations. Modifications in the preparation to improve the characteristics are proposed from an analysis of the model. It is recommended that the investigation be continued to include the incorporation and evaluation of the capacitors in monolithic and hybrid integrated circuits. Author
- Electrical and Electronic Equipment