UHF PNP Power Transistor.
Final technical rept.,
MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
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The objective of this contract was to develop the processing techniques for the fabrication of a PNP RF power transistor to serve as a complement to already existing NPN transistor structures. The transistor was to meet the following requirements 15 watts minimum output at 400 MHz with 6 dB gain Transistor dissipation, 25 watts at stud temperatures up to 75C Nominal operating voltage 28 to 32 volts and Low inductance hermetic package. Author
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