Accession Number:

AD0868893

Title:

Neutron Damage in Gunn Effect Devices.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH NJ

Personal Author(s):

Report Date:

1970-02-01

Pagination or Media Count:

20.0

Abstract:

A number of gallium arsenide Gunn diodes were exposed to neutron irradiation over a fluence range from 1.6 x 10 to the 13th power to 1.9 x 10 to the 14th power nsq cm E 10 keV. Parameters measured were the diode current-voltage characteristic, frequency, and output power. From the low-field resistance an unusually high carrier removal rate of 20cm was calculated. Output power and efficiency decreased linearly with increasing dose until catastrophic device failure occurred at approximately 10 to the 14th power nsq cm E 10 keV. The oscillating frequencies did not noticeably change. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE