300 C Transformer Rectifier.
Final rept. 1 Jan 68-31 Dec 69,
RCA ELECTRONIC COMPONENTS SOMERVILLE NJ ADVANCED TECHNOLOGY LAB
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Considerable progress was made towards the design and construction of rectifiers capable of 300C operation. A compatible metallization system, based on diffusion bonding tantalum shoes to an epitaxial GaAsP rectifier, was developed. A computer program was used to calculate temperature distributions and to optimize geometrical factors. Large-area, defect-free vapor hydride epitaxial n-type layers were grown progress here was based on improved RCA-grown substrates, surface preparation, and the exclusion of oxygen during growth. Addition of phosphine during epitaxy improved the reverse breakdown characteristics. Spectrographic analysis suggests that silicon is always present in epitaxial layers grown in quartz apparatus but that a large fraction of the silicon is electrically inactive. The growth of a p-type GaAs layer from solution is very advantageous from the production point of view, but large-area void-free growth is difficult and proved to be the limiting factor in this program. Both phosphosilicate and alumina were shown to be compatible junction protective coatings. Author
- Electrical and Electronic Equipment