Accession Number:

AD0868121

Title:

Radiation Effects on Gallium Arsenide Devices and Schottky Diodes. Volume 1

Descriptive Note:

Technical rept. 15 Feb 1967-15 Feb 1968

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE

Personal Author(s):

Report Date:

1968-08-01

Pagination or Media Count:

123.0

Abstract:

The theory of operation of the Schottky barrier diode is reviewed, and complications caused by a more accurate space-charge formulation are discussed. Consideration is given to image effects, tunneling, interfacial dielectric layers, surface states, and minority carrier current. The interaction of ionizing radiation with semiconducting materials is reviewed, as is the behavior of a Schottky barrier diode in an ionizing radiation environment. The resultant model for the Schottky barrier diode is analogous to a p-n diode with a very high dopant concentration on one side. Tests were performed upon gallium arsenide GaAs and silicon Schottky barrier diodes, using a 2-Mev flash X-ray machine. The GaAs Schottky diodes were tested while functioning as an X-band detector and mixer. No permanent change was observed in the voltage-current or capacitance-voltage characteristics, or in the noise figure of the diodes after irradiation. Diodes fabricated from both types of material were also tested in a more conventional DC bias circuit.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE