Accession Number:

AD0867813

Title:

Epitaxial Vapor Growth of Hg(1-x)Cd(x)Te in an Open Tube Apparatus

Descriptive Note:

Final rept. 1 Feb 1969-1 Feb 1970

Corporate Author:

IBM FEDERAL SYSTEMS DIV OWEGO NY ELECTRONICS SYSTEMS CENTER

Report Date:

1970-03-01

Pagination or Media Count:

75.0

Abstract:

Vapor absorption measurements were performed on the elements mercury, cadmium, and tellurium in both static cells and in the flowing gas dynamic open tube growth system. The results indicate that the dynamic system, under specific operating conditions, can demonstrate the same dependency relationship between source temperature and resultant optical density of the source vapor as was obtained in a closed, static system. To obtain better control of the cold finger temperature, a balanced-radiation apparatus was designed and fabricated. Hall measurements have been made on both as grown and annealed samples. A considerable number of crystal growth runs were made to determine the effect of a cold finger pedestal temperature change and of growth times upon the resulting growths. Both the relative percent by x-ray fluorescence mercury, cadmium, and tellurium were monitored as well as the total growth thickness and percentage sapphire cutoff. It was determined that the best detectors were produced in the temperature range of 594 degrees C to 602 degrees C for the chosen values of mercury, cadmium, and tellurium source temperatures.

Subject Categories:

  • Infrared Detection and Detectors
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE