Thin-Film Channel Multiplier Arrays.
Interim development rept. 18 Jun-17 Sep 68,
STANFORD RESEARCH INST MENLO PARK CA
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Progress toward the development of an array of submicron-diameter electron-multiplier channels in a thin wafer is described. The device is to be fabricated by the appropriate applications of thin-film techniques. Three aspects of the development are described 1 The exploration of resistive dynode film materials, and the initial experiments with film-deposition techniques 2 the formation of a perimeter-supported base film and 3 the formation of arrays of submicron-size holes in the base film. Resistive dynode films have been vacuum evaporated from electron-beam-heated composite cermet sources. Perimeter-supported films have been formed by floating films off substrates and picking them up on loops and by etching the substrate away from behind a film. Development of the techniques and equipment for submicron-diameter hole formation by exposure of an electron-sensitive resist followed by etching of the exposed material is discussed. Aspects of the multiplier wafer electron acceptance efficiency were considered. It was concluded that for reasonable mechanical and electrical parameters, effective input efficiencies on the order of 90 percent should be achieved. Author
- Electrical and Electronic Equipment