High Resolution Ion Beam Deposition of Thin Metal Films.
Interim Technical rept.,
DUKE UNIV DURHAM NC DEPT OF ELECTRICAL ENGINEERING
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An ion beam deposition system was designed and built to determine the limits of resolution and deposition rates for the formation of thin films. The theoretical characteristics for deposition of thin indium films were a 0.01 cm. diameter deposit with a beam of 100 eV energy. Predicted sweep velocity was 0.016 cmmin for a film 0.000002 cm. thick. A wide-slit scanning technique was developed to measure spot size. Chromatic aberration due to energy spread of source ions limited actual spot size to 0.074 cm. for a beam current of 10-8 amperes. Measurements of sputtering effects showed that unity sputtering of indium targets by indium ions occurred at an ion energy of 550 eV as compared with the predicted energy of 200 eV. Author
- Metallurgy and Metallography
- Fabrication Metallurgy
- Electricity and Magnetism