Manufacturing Methods and Process Controls for Low Cost Resonant Gate Transistors.
Final rept. 1 Jan 67-31 Dec 68,
WESTINGHOUSE MOLECULAR ELECTRONICS DIV LINTHICUM HEIGHTS MD
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The main purpose of the work was to develop and demonstrate manufacturing techniques and processes for the production of resonant gate transistors. Two particular resonant frequencies 3 KHz and 30 KHz were chosen as samples for demonstration purposes. In the photo-masking operations, KMER coatings were used and special procedures developed. Evaporated Ti-Au system was developed. Electro-plating techniques for Ni and Au were modified for actual manufacturing purposes. Finally, a manufacturing dicing technique was developed to protect the delicate dangling cantilever during the dicing and mounting operations. From the unbalanced pilot production, final operable device yields of about 58 and 52 were obtained for the 3 KHz and the 30 KHz designs, respectively. For the 3 KHz design, 92 of the operable units were within plus or minus 10 of the designed resonant frequency for the 30 KHz, 95. Various environmental tests indicated that most of the devices could be stored at 150C or be operated at 75C for 500 hours or more without failure, could withstand thermal shock test, vibration fatigue test at 5 g level and the centrifuge test at 250 g level. The devices could also withstand the variable frequency vibration test provided the test frequency was not near the resonant frequency of the device. Mechanical shock test proved most catastrophic to the RGT with only 50 passing the test at the 150 g level. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy