Improved Insulators for IC Technology.
Interim engineering rept. no. 3, 16 Jul-15 Oct 69,
RCA LABS PRINCETON NJ
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Plasma anodization of aluminum on silicon has shown promise in advancing state-of-the-art of integrated-circuit technology. During this reporting period the emphasis was on investigating the influence of silicon wafer preparation, studying the plasma anodization process, and carrying out dielectric, electrical, and radiation tests on MOS structures. It was found that work damage on the Si wafer results in poor adherence of both the Al and Al2O3 films. The study of the influence of overvoltage showed that above 5 V of overvoltage the growth of SiO2 is not negligible i.e., about 150A of SiO2 result from a 30-V overvoltage. G-V and C-V measurements indicate a low offset voltage and an almost ideal interface with interface state densities around 3 x 10 to the 10th powersq cm-eV. B-T tests reveal the presence of slight interface state trapping but no ion motion. Radiation testing continues to show that plasma-grown Al2O3 is superior to other materials as a radiation-resistant gate insulator. Shifts of a few volts under severe conditions are normal. MOS transistors have been fabricated using the Al-etch technique. Electrical characteristics are acceptable. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy