Single Crystal Silicon Ribbon Pilot Line.
Final technical rept. 1 Jan 68-31 Mar 69,
TEXAS INSTRUMENTS INC DALLAS
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During the contract period, capability of producing single crystal ribbons with several standard orientations has been achieved. Control of thickness and width tolerances have met basic contract goals. Resistivity control of approximately plus or minus 20 was attained, comparable to conventional silicon material technology. Studies of dopant diffusion in ribbon material demonstrated that accurate control of junction characteristics could be maintained. Major effort was directed toward extending ribbon growth techniques to a width of one inch and to continuous operation. Author
- Manufacturing and Industrial Engineering and Control of Production Systems