Research and Development of Low-Light-Level/Near IR Camera Tube with Solid-State Array Target.
Quarterly progress rept. no. 1, 21 Apr-31 Jul 69,
PHILIPS LABS BRIARCLIFF MANOR NY
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A program was initiated for the research and development of a low-light-levelnear infrared TV camera tube with a solid state array target. The first quarter effort was divided into two major tasks 1 a literature study and critical evaluation of feasible target structures, and 2 the fabrication and delivery of a best effort Si-vidicon camera tube based on previous work. A number of diode type target structures were considered, viz., Ge homojunctions Ge-GaAs and Ge-Si heterojunctions active Ge homojunctions with a passive GaAs image face. The main emphasis of the study was placed on conversion efficiency, extension of spectral response, and dark current. Relevant performance capabilities of both homojunction and heterojunction diode arrays are discussed. On the basis of these results, it is planned to emphasize work on the Ge array, possibly with a passive GaAs layer, and on the Ge-Si heterojunction structures. During this period, an Si-vidicon tube was delivered and experimental equipment set up for target evaluation. Author
- Optical Detection and Detectors