Accession Number:

AD0860916

Title:

Radiation Effects in Dielectric Materials.

Descriptive Note:

Quarterly rept. no. 3, 16 May-15 Aug 69,

Corporate Author:

GULF GENERAL ATOMIC CO SAN DIEGO CA

Personal Author(s):

• Harrity, John W.

Report Date:

1969-09-01

Pagination or Media Count:

24.0

Abstract:

Test on sapphire samples under irradiation show that sputtered-silver contacts demonstrate nearly as much polarization as ion-cleaned evaporated contacts, and that there is no polarization apparent in irradiation of Czochralski-sapphire samples with epitaxial silicon layers. Calculations on irradiation data from a Czochralski-sapphire sample yield a trap density in this material of about 6 x 10 to the 14th powercc with a trapping cross section of about 1.4 x 10 to the -14th powersq. cm. Other calculations with these data indicate that the range of the ionized secondary electrons in this material is about 1000A. Author

Descriptors:

• *DAMAGE
• *INTEGRATED CIRCUITS
• *DIELECTRICS
• RELIABILITY(ELECTRONICS)
• ELECTRON IRRADIATION
• EPITAXIAL GROWTH
• SEMICONDUCTING FILMS
• SPUTTERING
• SAPPHIRE
• SUBSTRATES
• GERMANIUM
• POLARIZATION
• POLARIZATION

Subject Categories:

• Electrical and Electronic Equipment
• Miscellaneous Materials
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE