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Accession Number:
AD0860916
Title:
Radiation Effects in Dielectric Materials.
Descriptive Note:
Quarterly rept. no. 3, 16 May-15 Aug 69,
Corporate Author:
GULF GENERAL ATOMIC CO SAN DIEGO CA
Report Date:
1969-09-01
Pagination or Media Count:
24.0
Abstract:
Test on sapphire samples under irradiation show that sputtered-silver contacts demonstrate nearly as much polarization as ion-cleaned evaporated contacts, and that there is no polarization apparent in irradiation of Czochralski-sapphire samples with epitaxial silicon layers. Calculations on irradiation data from a Czochralski-sapphire sample yield a trap density in this material of about 6 x 10 to the 14th powercc with a trapping cross section of about 1.4 x 10 to the -14th powersq. cm. Other calculations with these data indicate that the range of the ionized secondary electrons in this material is about 1000A. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE