Studies of Electron Scattering in Thin Films.
Final rept. 15 Oct 67-15 May 69,
MINNESOTA UNIV MINNEAPOLIS PHYSICAL ELECTRONICS LAB
Pagination or Media Count:
Several series of experiments were performed to establish the mechanism of current flow in vacuum deposited Au-MgO-Au thin film sandwich devices in which each layer was deposited from a high purity source by electron beam evaporation. The mechanism of injection of electrons into the oxide conduction band was that of Schottky emission over the barrier. Emission into vacuum was observed for each device but was found to be through pin-holes in the Au overlayer film and controlled by charging of the oxide emitting area. The current-voltage characteristics of plasma anodized Ta-Ta2O5-Au devices were studied and compared with the characteristics of aqueously anodized Ta-Ta2O5-Au devices. Oxide film uniformity and the occurrence of defects are analyzed as a function of film thickness. Electron microscope techniques are applied to the study of the nucleation and growth of thin gold films on Al2O5 substrates. Stop-motion study of the gold films was used to study the growth parameters. Author
- Electrical and Electronic Equipment
- Solid State Physics