Rapid Annealing in Silicon Semiconductor Devices.
Technical rept. Sep 67-Dec 68,
HUGHES AIRCRAFT CO FULLERTON CA
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Rapid annealing in silicon was described by a theory based on the motion of a single type of defect. Two stages in the motion of the defect were treated recombination with fixed defects in a spherical cluster and the subsequent diffusion out of the cluster. The two stages were separated by a transition time. Room temperature experiments were performed with eight NPN planar transistor types at 1 mA with emitter areas from 0.003 to 0.1 sq mm. The two annealing stages were identified in all the transistors, separated by a transition time of 2.6 plus or minus 1.0 ms. A change from one to two annealing stages was observed in the 2N5016 power transistor by increasing the current from 3 mA to 100 mA. Only a single annealing stage was observed for transistors from the DTL926 and DTL33 microcircuits. The transition time between stages increased with decreasing injection level in the 2N1613. The variation in the transition time with temperature for the 2N1613 was used to derive an activation energy for the mobile defect of 0.31 plus or minus 0.03 eV. This result agrees, within error, with the activation energy for the vacancy in p-type silicon. The calculated cluster radius is in reasonable agreement with one-half the primary recoil range. An annealing process appearing in the 1N1344 diode at very early times at dry ice temperatures is tentatively identified with subcluster effects. Author
- Electrical and Electronic Equipment
- Solid State Physics