Advanced Concepts of Microwave Generation and Control in Solids.
Quarterly progress rept. no. 7, 1 Apr-30 Jun 69,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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Research was conducted on Gunn effect oscillators and diodes. Further computer studies of GaAs devices in realistic microwave circuits were carried out. The main effort was to evaluate the effect of partial domain formation. The effects of average and gradient heating on the efficiency and switching voltage in epitaxial GaAs Gunn diodes was also examined. Research was conducted on avalanche diodes IMPATT. ARP mode oscillator experiments and detailed studies of degenerate and quasi-degenerate amplification are discussed. Schottky barrier avalanche diodes have been made which oscillate in the Ku-band better than diodes made by diffusion on the same wafer. Experimental verification of a modified McIntyre avalanche noise theory was performed on extremely uniform vacuum diffused silicon diodes. Work has continued on the growth of high-quality epitaxial gallium arsenide for Gunn-effect applications. Improvements in the sputtering and contacting procedures of silicon and work on ion implantation are described. Progress to date on construction and operation of a microstrip circuit fabrication facility is reported. Author
- Electrical and Electronic Equipment
- Solid State Physics