Factors Influencing the Temperature Dependence of Lasing Threshold Current Density.
ARMY MISSILE RESEARCH DEVELOPMENT AND ENGINEERING LAB REDSTONE ARSENAL AL PHY SICAL SCIENCES DIRECTORATE
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Conditions relating to the threshold for laser action in GaAs injection diodes are examined. Equations which can be employed as experimental checks on theory are derived. The theory of band-to-band Auger recombination is considered, and its implications as to the behavior of the nonradiative lifetime for injected electrons in diodes under study in this laboratory are discussed. Areas where existing data are incomplete are pointed out, and some insight as to how these data should be analyzed is obtained. Author
- Lasers and Masers