Accession Number:

AD0857529

Title:

Factors Influencing the Temperature Dependence of Lasing Threshold Current Density.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY MISSILE RESEARCH DEVELOPMENT AND ENGINEERING LAB REDSTONE ARSENAL AL PHY SICAL SCIENCES DIRECTORATE

Personal Author(s):

• Smith, J. Lynn

Report Date:

1969-06-16

Pagination or Media Count:

21.0

Abstract:

Conditions relating to the threshold for laser action in GaAs injection diodes are examined. Equations which can be employed as experimental checks on theory are derived. The theory of band-to-band Auger recombination is considered, and its implications as to the behavior of the nonradiative lifetime for injected electrons in diodes under study in this laboratory are discussed. Areas where existing data are incomplete are pointed out, and some insight as to how these data should be analyzed is obtained. Author

Descriptors:

• *LASERS
• GALLIUM ARSENIDES
• TEMPERATURE
• ELECTRIC CURRENT
• INJECTION
• BAND THEORY OF SOLIDS
• RECOMBINATION REACTIONS

Subject Categories:

• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE