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Improved Insulators for IC Technology.
Interim engineering rept. no. 2, 16 Apr-15 Jul 69,
RCA LABS PRINCETON NJ
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Silicon dioxide is, at present, almost exclusively used as the dielectric thin-film material for discrete and integrated semiconductor device fabrication. However, there is still a need for an improved insulator which can advance the state-of-the-art of integrated-circuit technology. Plasma anodization of aluminum on silicon has shown promise in this respect. During this reporting period an improved pre-deposition cleaning and bake-out procedure has been instituted. This resulted in reduction of 1 particulate structure on the silicon surface and 2 bubbles in the Al2O3 films, and thus allowed resumption of full-scale electrical testing. In addition, considerable effort was placed on establishing control over the aluminum deposition and anodization process. Evaluation of MOS capacitors showed that their characteristics are comparable to earlier results, especially in the area of interface state density, oxide charge, and radiation behavior. Author
APPROVED FOR PUBLIC RELEASE