Accession Number:

AD0856003

Title:

Compensation and VALANCHE Techniques for Tree Hardening. Volume I. Junction-Compensation Techniques for Tree Hardening

Descriptive Note:

Technical rept. 20 Aug 1966-20 Aug 1967

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

• Davis, Goebel, Jr.
• Grannemann, W. W.
• Boatwright, L. T.
• Cates, Harold T.

Report Date:

1969-05-01

Pagination or Media Count:

220.0

Abstract:

The reduction of the effects of transient gamma radiation on transistor circuits by using reverse-biased junctions placed at circuit points where they produce primary photocurrents that cancel out or compensate for the transient-radiation responses of the original circuit is evaluated. Approximate equivalent circuits which include junction compensation and approximate equations for engineering-design hardening criteria are developed. Selected circuits exposed to transient ionizing radiation environments, with photocurrent compensation and without photocurrent compensation, were analyzed using a digital computer and the CIRCUS analysis program. These computed results were compared to the responses actually observed when the items were exposed to a radiation environment at the Air Force Weapons Laboratorys 2 Mev flash X-ray facility. With good design and for certain bias regions of operation, the peak magnitude of the transient-radiation response of an amplifier can usually be reduced by a factor of 3 to 1 to 10 to 1 for radiation levels up to approximately 0.5 x 10 to the 10th power Rsec.

Descriptors:

• *DAMAGE
• *SEMICONDUCTOR DEVICES
• GAMMA RAYS
• HARDENING
• IONIZATION
• SEMICONDUCTOR DIODES
• SIMULATION
• TRANSIENTS
• TRANSISTOR AMPLIFIERS
• TRANSISTORS

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE