Advanced Concepts of Microwave Generation and Control in Solids.
Quarterly progress rept. no. 6, 1 Jan-31 Mar 69,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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The report deals with theoretical and experimental studies of Gunn oscillators, avalanche diode oscillators and microwave semiconductor materials studies. Results of computer simulated studies of LSA operated GaAs diodes are described and equivalent circuits of practical cavities, multifrequency operation of LSA diodes, heating effects, and a new high power relaxation mode of operation are also discussed. Studies of the avalanche resonance pumped ARP mode of operation of Si avalanche diodes are discussed. Techniques for producing 350 mW, 9.5 GHz, 6 percent efficiency IMPATT diodes are described. Studies of multiplication noise in uniform avalanche diodes are discussed. Included also are the results of studies of multifrequency operation, temperature effects, and avalanche currents in IMPATT diodes. A simple procedure for designing PNN diodes is also given. Studies of microwave materials are described including liquid phase growth of GaAs, a photoconductivity method of probing the local resistivity of GaAs, and field emission from Ge points. Author
- Electrical and Electronic Equipment
- Solid State Physics