Microwave Measurement of the Negative Differential Mobility in N-GaAs.
Interim Technical rept.,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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The negative differential mobility in bulk n-GaAs was measured using microwave techniques. Measurements were made both at room temperature and at temperatures below room temperature for samples of n-type GaAs having different low-field mobilities and doping densities at room temperature. The average conductivity of the sample when subjected to different peak r-f electric fields was measured and the instantaneous conductivity deduced by solving an integral equation. Author
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