Accession Number:

AD0854144

Title:

Epitaxial Vapor Growth of HgxCd1-xTe in an Open-Tube Apparatus.

Descriptive Note:

Final rept. 15 Dec 67-15 Dec 68,

Corporate Author:

IBM FEDERAL SYSTEMS DIV OWEGO NY ELECTRONICS SYSTEMS CENTER

Report Date:

1969-05-01

Pagination or Media Count:

47.0

Abstract:

The purpose of this work was to 1 further develop a technique for reproducibly growing a homogeneous, predetermined composition of mercury-cadmium-telluride in single-crystal form by epitaxy, 2 to test this material for significant characteristics, and 3 to fabricate and evaluate infrared radiation detectors from the grown material. Work was initiated under this program to exercise quantitative control over the growth processes, and a special apparatus was built and tested toward this end. Analytical data were obtained to relate semiconducting properties of deposited material with crystal growth parameters. Infrared detectors were fabricated from epitaxial material, and their properties were measured to gain further understanding of the exact mechanism of the growth of HgxCd1-xTe in an open-tube epitaxial system. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE