Research to Investigate the Mechanisms of Transient Radiation Induced Latchup in Integrated Circuits.
Final rept. 1 Jan-31 Dec 68,
SYSTEMS SCIENCE AND SOFTWARE LA JOLLA CA
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A study was made of integrated circuit IC structures which are susceptible to ionizing-radiation-induced latchup. Structures exhibiting PNPN action, transistor sustaining voltage breakdown, and second breakdown were evaluated. The usefulness of laboratory electrical testing techniques to identify latchup-prone structures was established. It is concluded that certain design and testing procedures can establish a high level of confidence in the radiation resistance of a given IC type to latchup-mode failures. Recommendations are made concerning these procedures. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products