Accession Number:

AD0852862

Title:

Research to Investigate the Mechanisms of Transient Radiation Induced Latchup in Integrated Circuits.

Descriptive Note:

Final rept. 1 Jan-31 Dec 68,

Corporate Author:

SYSTEMS SCIENCE AND SOFTWARE LA JOLLA CA

Personal Author(s):

• Poll, Robert A.
• Leavy, James F.

Report Date:

1969-02-01

Pagination or Media Count:

85.0

Abstract:

A study was made of integrated circuit IC structures which are susceptible to ionizing-radiation-induced latchup. Structures exhibiting PNPN action, transistor sustaining voltage breakdown, and second breakdown were evaluated. The usefulness of laboratory electrical testing techniques to identify latchup-prone structures was established. It is concluded that certain design and testing procedures can establish a high level of confidence in the radiation resistance of a given IC type to latchup-mode failures. Recommendations are made concerning these procedures. Author

Descriptors:

• *INTEGRATED CIRCUITS
• DAMAGE
• NUCLEAR RADIATION
• FAILURE(ELECTRONICS)
• TRANSIENTS
• ELECTRIC DISCHARGES
• TRANSISTORS
• TEST METHODS
• TEST METHODS

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE