Accession Number:

AD0852526

Title:

Vacuum-Evaporated, Single-Crystal Silicon Film on a Sapphire Substrate,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

• Namba, S.
• Kawazu, A.
• Maruyama, T.

Report Date:

1969-02-26

Pagination or Media Count:

15.0

Abstract:

The authors induced the epitaxial growth of single-crystal silicon films on optically flat, polished sapphire substrates. They have determined the nature of the relationship between deposition parameters substrate temperature, rate of deposition, residual gas pressure and the characteristics of the developed film. They have demonstrated that a thin film which is deposited on a substrate at a temperature of 800 degrees C in a vacuum of at least .000001 pressure and has a growth rate of approximately 10 As, is suitable for use in the production of various semiconductor devices.

Descriptors:

• *EPITAXIAL GROWTH)
• (*SEMICONDUCTING FILMS
• (*SILICON
• VAPOR PLATING)
• SINGLE CRYSTALS
• VACUUM APPARATUS
• SAPPHIRE
• ELECTRICAL PROPERTIES
• CRYSTAL STRUCTURE
• HUNGARY

Subject Categories:

• Manufacturing and Industrial Engineering and Control of Production Systems
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE