Accession Number:

AD0852161

Title:

Improved Insulators for IC Technology.

Descriptive Note:

Interim engineering rept. no. 1, 16 Jan-15 Apr 69,

Corporate Author:

RCA LABS PRINCETON NJ

Personal Author(s):

• Rappaport, P.
• Zaininger, K. H.

Report Date:

1969-05-01

Pagination or Media Count:

38.0

Abstract:

Silicon dioxide is, at present, almost exclusively used as the dielectric thin-film materials for semiconductor device fabrication. However, there is still a need for an improved insulator which can advance the state-of-the-art of integrated-circuit technology. Plasma-anodization of aluminum on silicon has shown promise in this respect. During this reporting period the characterization of the film fabrication technique was initiated. Major emphasis was placed on correlating certain film properties with the parameters of the anodization process. Author

Descriptors:

• *DIELECTRIC FILMS
• *INTEGRATED CIRCUITS
• ALUMINATES
• FILMS
• DEPOSITION
• ANODIC COATINGS
• SILICON
• SEMICONDUCTORS
• MANUFACTURING

Subject Categories:

• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE