Accession Number:

AD0851835

Title:

Development of Thin-Film Active Devices on an Improved Insulating Substrate.

Descriptive Note:

Final rept. 1 Mar 68-28 Feb 69,

Corporate Author:

RCA LABS PRINCETON NJ

Personal Author(s):

Report Date:

1969-04-01

Pagination or Media Count:

117.0

Abstract:

A detailed study has been made of the effect of deposition conditions on the properties of 1.5-2.0 micron thick silicon films epitaxially grown on single crystal magnesium aluminate spinel substrates. The carrier mobility and the change of mobility during oxidation for 1 hr at 1100C have been used to monitor the film quality and to provide an indication of the usefulness of the composite material in device structures. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE