Development of Thin-Film Active Devices on an Improved Insulating Substrate.
Final rept. 1 Mar 68-28 Feb 69,
RCA LABS PRINCETON NJ
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A detailed study has been made of the effect of deposition conditions on the properties of 1.5-2.0 micron thick silicon films epitaxially grown on single crystal magnesium aluminate spinel substrates. The carrier mobility and the change of mobility during oxidation for 1 hr at 1100C have been used to monitor the film quality and to provide an indication of the usefulness of the composite material in device structures. Author
- Electrical and Electronic Equipment
- Solid State Physics