Development of Avalanche Oscillators at 10 GHz and 18.3 GHz.
Final engineering rept. 23 Jun 67-23 Dec 68,
MICROWAVE ASSOCIATES INC BURLINGTON MA
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Tunable avalanche oscillators for X- and Ku-bands with silicon avalanche diodes are described. The output power exceeds 200 mW for all oscillators, the highest power measured is over 300 mW. Wide-band tuning in X-band is accomplished in a low-Q resonator whereas limited tuning is possible in a high-Q cavity. The Ku-band oscillator allows for small-band tuning at about 18 GHz. Data on avalanche diode development as well as on noise measurements are described in separate sections of the report. Author
- Electrical and Electronic Equipment