Accession Number:

AD0850999

Title:

Development of Avalanche Oscillators at 10 GHz and 18.3 GHz.

Descriptive Note:

Final engineering rept. 23 Jun 67-23 Dec 68,

Corporate Author:

MICROWAVE ASSOCIATES INC BURLINGTON MA

Personal Author(s):

• Moroney, W. J.
• Noisten, J.
• Whitman, P. C.

Report Date:

1969-04-18

Pagination or Media Count:

49.0

Abstract:

Tunable avalanche oscillators for X- and Ku-bands with silicon avalanche diodes are described. The output power exceeds 200 mW for all oscillators, the highest power measured is over 300 mW. Wide-band tuning in X-band is accomplished in a low-Q resonator whereas limited tuning is possible in a high-Q cavity. The Ku-band oscillator allows for small-band tuning at about 18 GHz. Data on avalanche diode development as well as on noise measurements are described in separate sections of the report. Author

Descriptors:

• *AVALANCHE DIODES)
• (*MICROWAVE OSCILLATORS
• SILICON
• X BAND
• K BAND
• RADIOFREQUENCY POWER
• TUNING DEVICES
• CAVITY RESONATORS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE