Solution Growth of Gallium Arsenide.
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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The theory and experimental procedure for growth of epitaxial layers of GaAs by the solution regrowth method is described. Both GaAs of low carrier concentration with high mobility and intentionally doped GaAs layers, suitable for application to Gunn effect devices, can be grown by this process. Several methods for the evaluation of the thickness, doping profiles and mobility of the GaAs layers are discussed. The limitations of these methods are also presented. Several working Gunn devices were fabricated either with solution grown contacts on commercially made epitaxial active layers or with solution grown active layers. Author
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