Further Development of an Electronically Controllable Microwave Window.
Quarterly rept. no. 2, 27 Oct 68-27 Jan 69,
RENSSELAER POLYTECHNIC INST TROY NY DIV OF ELECTROPHYSICS
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The report contains the results of a research study carried out for investigating the different recombination mechanisms present in the microwave switch and the way in which the processing steps affects them. The results show that the developed fabrication procedures are appropriate for producing large area PIN diodes with carrier lifetime in excess of 50 microseconds. The changes made in the X-band window mask in order to incorporate the inductive iris necessary for tuning the capacitive susceptance of the window are described. The results of tests carried out in several X-band windows are presented. Account is given of the improvements made in the S-band window microwave mount. Author
- Electrical and Electronic Equipment