S- and X-Band Schottky Barrier Diode Manufacturing Methods.
Final rept. 1 Jan 67-Sep 68,
MICROWAVE ASSOCIATES INC BURLINGTON MA
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Silicon Schottky-barrier diodes were produced which simulate the microwave characteristics of conventional 1N21 and 1N23 point-contact diodes and are directly replaceable in existing standard mixers. In addition to the replacement diodes, both S- and X-band stripline Schottky-barrier diodes were fabricated. A pilot line was established to fabricate the diodes required for reliability testing and to supply the Air Force with 1500 diodes of each type. The diodes were characterized for mixer applications over a wide range of frequencies and powers. Laboratory pulse burnout experiments are reported. Field tests indicate that burnout is dependent on the particular radar set and is not simply related to the laboratory results. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems