Study of Generalized, Lumped Transistor Models for Use with SCEPTRE.
Technical rept. 1 Aug 67-1 Jul 68,
NORTHROP CORPORATE LABS HAWTHORNE CA
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A family of bipolar transistor lumped models was derived and successfully evaluated for SCEPTRE analysis. Application of these models will allow accurate representation of electrical performance and radiation-induced transient response. The most important improvements over existing SCEPTRE models are in the more accurate representations of the physical effects controlling electrical and radiation-induced storage time, and in the direct prediction of the transistor detailed radiation-induced response from the ionizing radiation intensity. SCEPTRE-compatible models were also derived for the transistor and diffused resistor elements of integrated circuits. The transistor models are straight-forward extensions of the discrete transistor models developed. Diffused resistor models were developed and evaluated for the elements of multiple-chip, dielectric-isolation, and junction-isolated integrated circuits. Models are suggested for the important second-order effects of radiation-induced shunt current flow between segments of the resistor and conductivity modulation. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products