Accession Number:

AD0849595

Title:

Study of Generalized, Lumped Transistor Models for Use with SCEPTRE.

Descriptive Note:

Technical rept. 1 Aug 67-1 Jul 68,

Corporate Author:

NORTHROP CORPORATE LABS HAWTHORNE CA

Report Date:

1969-02-01

Pagination or Media Count:

128.0

Abstract:

A family of bipolar transistor lumped models was derived and successfully evaluated for SCEPTRE analysis. Application of these models will allow accurate representation of electrical performance and radiation-induced transient response. The most important improvements over existing SCEPTRE models are in the more accurate representations of the physical effects controlling electrical and radiation-induced storage time, and in the direct prediction of the transistor detailed radiation-induced response from the ionizing radiation intensity. SCEPTRE-compatible models were also derived for the transistor and diffused resistor elements of integrated circuits. The transistor models are straight-forward extensions of the discrete transistor models developed. Diffused resistor models were developed and evaluated for the elements of multiple-chip, dielectric-isolation, and junction-isolated integrated circuits. Models are suggested for the important second-order effects of radiation-induced shunt current flow between segments of the resistor and conductivity modulation. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE