Accession Number:

AD0849045

Title:

A Simple Characterization of Gate-To-Substrate Impedance in Metal-Oxide-Semiconductor Structures Under Nonequilibrium Conditions.

Descriptive Note:

Technical rept.,

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1968-12-01

Pagination or Media Count:

68.0

Abstract:

Common to all MOS field-effect transistors and gate-controlled diodes is a metallurgical junction adjacent to the field-influenced semiconductor surface. This junction plays a very important role in determining the nature of the space-charge region beneath the entire gate. A reverse biased junction can create a condition of nonequilibrium in this region and can also act as a primary source of minority carriers for the formation of an inversion layer. This leads to the possibility of lateral ac potential variations along the surface. A distributed model is proposed to describe the influence of a reverse biased junction on the gate-to-substrate impedance measurements of an MOS device, and expressions are developed to facilitate application to actual devices. This model is capable of predicting the effects of measurement frequency, gate-to-substrate bias, junction reverse bias, and device geometry. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE