A Simple Characterization of Gate-To-Substrate Impedance in Metal-Oxide-Semiconductor Structures Under Nonequilibrium Conditions.
STANFORD UNIV CA STANFORD ELECTRONICS LABS
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Common to all MOS field-effect transistors and gate-controlled diodes is a metallurgical junction adjacent to the field-influenced semiconductor surface. This junction plays a very important role in determining the nature of the space-charge region beneath the entire gate. A reverse biased junction can create a condition of nonequilibrium in this region and can also act as a primary source of minority carriers for the formation of an inversion layer. This leads to the possibility of lateral ac potential variations along the surface. A distributed model is proposed to describe the influence of a reverse biased junction on the gate-to-substrate impedance measurements of an MOS device, and expressions are developed to facilitate application to actual devices. This model is capable of predicting the effects of measurement frequency, gate-to-substrate bias, junction reverse bias, and device geometry. Author
- Electrical and Electronic Equipment
- Solid State Physics