An Investigation of Static and Dynamic Stress Phenomena in Silicon with Infrared Birefringence.
Final rept., 12 Feb 68-11 Nov 68,
HUGHES AIRCRAFT CO FULLERTON CALIF
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The thermomechanical effects of energy depositions in silicon have been studied. A unique diagnostic optical technique - an infrared polariscope - was developed and employed to investigate both dynamic and static stresses in silicon. Among various surface treatments studied, sawing and grinding were found to produce the greatest damage in the silicon adjacent to the surface. Determinations of transient stresses produced by an exploding wire generator were made with the dynamic polariscope. The significance of high energy radiation induced free-carrier absorption was also determined and a limited amount of silicon fracture threshold data was compiled. Solutions of thermoelastic equations, describing stresses induced by transient energy depositions for several specific cases, were obtained and the results discussed. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics