Accession Number:

AD0844476

Title:

Solid-State Electronic Circuit Elements. Part III,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1967-11-21

Pagination or Media Count:

18.0

Abstract:

The article continues with the description and basic analysis of semiconductor elements. All devices considered here are classified as triodes and they represent different variations of bipolar transistors. This group includes junction transistors alloy, diffusion, pnip, mesa, epitaxial-planar, double-diffusion, surface-barrier, point-contact transistor, hook transistor, avalanche-effect, field-effect transistors, double-base diode and four-layer triode. The discussion of these devices covers their fabrication techniques and is illustrated by physical model diagrams, equivalent circuit diagrams and characteristic curves. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE