Passive Film Components for Silicon Integrated Circuits.
Final rept. 1 Mar 67-30 Apr 68,
SPERRY RAND RESEARCH CENTER SUDBURY MA
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The purpose of the contract was the development of improved thin film passive components compatible with the silicon integrated circuit technology. Pyrolytic silicon oxynitride was used to form metal-insulator-silicon MIS capacitors, and rf reactively sputtered silicon oxynitride was used for metal-insulator-metal MIM capacitors. Both types of oxynitride were formed by N2O addition to the reactant gases. The dependence of dielectric constant, etch rate, breakdown strength and IR transmittance on N2O addition was measured. The MIS capacitors had breakdown strengths of 1.0 x 10 to the 7th power Vcm for a wide range of conditions, while MIM capacitors having molybdenum electrodes had equally high breakdown strengths for 5-10 N2O additions. Temperature coefficient, dissipation factor, and frequency dependence of dielectric constant were all small. Thin film resistors formed from co-sputtered Pt and silicon oxynitride cermet films had sheet resistance of 10 k ohmssq cm with TCRs of 100 ppm for 1500A film thickness and specified fabrication conditions. A passive network, using MIS and MIM capacitors with a thin film resistor and having Mo electrodes and double layer contacts of Au-nichrome, was fabricated on silicon substrates. This demonstrated the compatibility of the thin film components with each other and with the silicon integrated circuit technology. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy