Microwave Generation from Avalanche Transit Time Diodes
Quarterly rept. no. 4, 1 Apr-30 Jun 1968
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MA SEMICONDUCTOR DIV
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Work was devoted to optimization of device processing, geometry, development of a passivated-mesa process, identification of remaining material and related problems and evaluation of inverted chips as pulsed and CW oscillators. A process was perfected for inverted mounting which consistently resulted in very low thermal resistance on copper, and diamonds were successfully metalized and mounted in which will allow a further reduction of thermal resistance in the next quarter. Effort has been aimed at fabricating passivated and unpassivated diodes capable of inverted mounting which will produce CW power in the half-watt range at X-band. In addition, extensive studies of the noise properties of avalanche diodes has resulted in circuit refinements which reduce the AM noise by as much as 15 db in the frequency range of 10 kHz to 100 MHz off carrier, resulting in sideband-noise-to-carrier ratios better than -120 db kHz for Q sub L 80 and 20 mW output.
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