Diffusion From Doped Oxides.
Final rept. 15 Apr 67-15 Apr 68,
NATIONAL CASH REGISTER CO DAYTON OH
Pagination or Media Count:
The report describes the evaluation of thin films of silicon dioxide silica as potential diffusion sources for silicon semiconductor technology. The oxide films are deposited from an aqueous suspension of colloidal silica. Dopants are added to the suspension in the form of water-soluble compounds so that when the oxide film is applied and dried, a doped oxide film is formed. With this method the concentration of dopant in the silica is easily controlled over a wide range. The factors studied were junction depth and surface concentration as a function of oxide composition, oxide thickness, diffusion time, and diffusion temperature. Other properties of the oxide layer studied were index of refraction, etch rate, shrinkage, and densification treatments. Single and double junction devices were fabricated to illustrate the uniformity of diffusions produced by this technique. Author
- Electrical and Electronic Equipment
- Solid State Physics