The Effect of Neutron Radiation on Unijunction Transistors and Silicon Control Rectifiers.
ARMY MISSILE RESEARCH DEVELOPMENT AND ENGINEERING LAB REDSTONE ARSENAL AL GUI DANCE AND CONTROL DIRECTORATE
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The paper presents the results of theoretical study and of actual tests on unijunction transistors in a nuclear environment of fast neutrons. The investigation of silicon control rectifiers was principally restricted to their use with unijunction transistors. In the theoretical study, a technique was developed to predict damage caused by neutrons. A number of sample unijunction transistors were irradiated, then tested, and the results compared with predicted values. It was found that the construction of the device was important in determining the level of radiation that the device could withstand. This study indicates that the monolithic device can be expected to operate in neutron environments about five times higher than the bar type device and the silicon control rectifiers. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products