Radiation Effects on Gallium Arsenide Devices and Schottky Diodes, Volume II.
Technical rept. 15 Feb 67-15 Feb 68,
NEW MEXICO UNIV ALBUQUERQUE
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Three gallium arsenide GaAs Gunn oscillators, several GaAs Transistors, and an optoelectronic pulse amplifier were investigated in a flash X-ray environment. Pulsed fast neutron damage to these devices was also studied. Test data for the transistors were compared to data for a 2N914 silicon transistor because both device characteristics are similar. Two Gunn diodes in the flash X-ray pulse reacted violently at 3 x 10 to the 8th power radsec. Individual components of the amplifier, including a GaAs light-emitting diode and a silicon light sensor, were studied. The light sensor is the critical element in the amplifier, being highly sensitive to the neutron fluences. However, physical limitations precluded study of flash X-ray effects upon a separate light emitter. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products