Accession Number:

AD0840793

Title:

DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Descriptive Note:

Final engineering rept.,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Personal Author(s):

• Hutchins, Charles

Report Date:

1968-09-01

Pagination or Media Count:

58.0

Abstract:

Power MOSFETs P-channel enhancement, buried-gate FETS, and conventional junction-gate FETs were examined to determine which structure is best suited for a high power, high frequency amplifier. The buried-gate FET proved very difficult to process for desirable electrical characteristics. Characteristics reported on the other structures include dc, small-signal Y parameters, calculated power gain, power amplifier measurements, and switching circuit measurements. The power MOSFET structures tested for this contract achieved up to 30 W RF output at 30 MHz with very low distortion characteristics. Small signal JG-FET units gave 1 W output at 175 MHz with similarly low distortion characteristics. Changing the MOSFET to an improved geometry layout and to N-channel depletion mode Class AB RF operation looks promising for an RF linear amplifier. Author

Descriptors:

• (*FIELD EFFECT TRANSISTORS
• TRANSISTOR AMPLIFIERS)
• EPITAXIAL GROWTH
• POWER AMPLIFIERS
• GAIN
• SWITCHING CIRCUITS
• RADIOFREQUENCY POWER
• PERFORMANCE(ENGINEERING)

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE