DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Final engineering rept.,
TEXAS INSTRUMENTS INC DALLAS
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Power MOSFETs P-channel enhancement, buried-gate FETS, and conventional junction-gate FETs were examined to determine which structure is best suited for a high power, high frequency amplifier. The buried-gate FET proved very difficult to process for desirable electrical characteristics. Characteristics reported on the other structures include dc, small-signal Y parameters, calculated power gain, power amplifier measurements, and switching circuit measurements. The power MOSFET structures tested for this contract achieved up to 30 W RF output at 30 MHz with very low distortion characteristics. Small signal JG-FET units gave 1 W output at 175 MHz with similarly low distortion characteristics. Changing the MOSFET to an improved geometry layout and to N-channel depletion mode Class AB RF operation looks promising for an RF linear amplifier. Author
- Electrical and Electronic Equipment