Accession Number:

AD0840070

Title:

LOW-NOISE MICROWAVE TRANSISTORS.

Descriptive Note:

Semiannual rept. no. 1, 10 Nov 67-9 May 68,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s):

Report Date:

1968-09-01

Pagination or Media Count:

24.0

Abstract:

A number of NPN double-diffused silicon microwave transistors were fabricated using 1.9-micro meters widths and spacings. These devices had common-emitter maximum available gains up to 11.5 dB at 3 GHz. The 6.0-GHz gain was extrapolated to be approximately 5.5 dB. These measurements were obtained from devices mounted in the miniature coaxial package. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE