LOW-NOISE MICROWAVE TRANSISTORS.
Semiannual rept. no. 1, 10 Nov 67-9 May 68,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Pagination or Media Count:
A number of NPN double-diffused silicon microwave transistors were fabricated using 1.9-micro meters widths and spacings. These devices had common-emitter maximum available gains up to 11.5 dB at 3 GHz. The 6.0-GHz gain was extrapolated to be approximately 5.5 dB. These measurements were obtained from devices mounted in the miniature coaxial package. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems